WPM3005 single p-channel, -30v, -4.1a, power mosfet descriptions the WPM3005 is p-channel enhancement mos field effect transistor. uses advanced trench technology and desig n to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM3005 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot - 23-3 l applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23-3 l pin configuration (top view) w35* w35 = device code * = month (a~z) marking order information device package shipping WPM3005-3/tr sot - 23-3 l 3000/reel&tape v ds (v) rds(on) (
) 0.057@ v gs = " 10.0v 0.057@ v gs = " 10.0v 0.083@ v gs = " 4.5v -30 0.083@ v gs = " 4.5v d 3 gs 1 2 3 2 1 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol typical maximum unit t ? 10 s 65 85 junction-to-ambient thermal resistance a steady state r ja 90 125 t ? 10 s 85 100 junction-to-ambient thermal resistance b steady state r ja 115 140 junction-to-case thermal resistance steady state r jc 40 60 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. parameter symbol 10 s steady state unit drain-source voltage v ds -30 gate-source voltage v gs 20 v t a =25c -4.1 -3.4 continuous drain current a t a =70c i d -3.3 -2.7 a t a =25c 1.4 1.0 maximum power dissipation a t a =70c p d 0.9 0.6 w t a =25c -3.8 -3.2 continuous drain current b t a =70c i d -3.0 -2.5 a t a =25c 1.2 0.8 maximum power dissipation b t a =70c p d 0.8 0.5 w pulsed drain current c i dm -25 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings WPM3005 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -30 v zero gate voltage drain current i dss v ds = -24 v, v gs gate-to-source leakage current i gss v ds = 0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -1.5 -2.0 -2.5 v v gs = -10v, i d = -4.1a v gs = -10v, i d = -3.0a v gs = -4.5v, i d = -4.0a drain-to-source on-resistance r ds(on) v gs = -4.5v, i d = -3.0a m ? forward transconductance g fs v ds = -5 v, i d = -4.1a 7.6 s charges, capacitances and gate resistance input capacitance c iss 670 output capacitance c oss 75 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = -15 v 62 pf total gate charge q g(tot) 14.0 threshold gate charge q g(th) 1.31 gate-to-source charge q gs 2.0 gate-to-drain charge q gd v gs = -10 v, v ds = -15 v, i d = -4.1 a 2.45 nc switching characteristics turn-on delay time td(on) 6.8 rise time tr 3.2 turn-off delay time td(off) 25.2 fall time tf v gs = -10 v, v ds = -15v, r l = 5.0 ? , r g =15 ? 4.4 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 0v -1 ua 57 60 57 60 83 90 83 90 = -1.0a -0.55 -0.78 -1.50 v WPM3005 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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